Silicon-based single photon avalanche diode (Si-SPAD) have found wide applications in various fields, including fluorescence detection and laser radar. However, noise is a key parameter for these areas. For instance, thermal noise, stochastic noise, and other interference factors can significantly reduce the quantum efficiency of devices. Therefore, carrying out device-level noise signal simulations is crucial for the design of high-performance SPAD. This paper implements a Simple Monte Carlo (SMC) model for Random Telegraph Signal (RTS) noise. The SMC modeling is applied to predict the avalanche breakdown voltage of the device. Additionally, the RTS noise characteristics of the SPAD device are tested and analyzed. The discrepancy between simulation and experimental results falls within a 5% margin.